amplifiers - l ine a r & p ower - chip 1 HMC952 v00.0312 gaas phemt mmic 2 watt power amplifier with power detector, 9 - 14 ghz general description features functional diagram the hm c952 is a four stage gaas p hem t mmi c 2 w att p ower amplifer with p ower detector which operates between 9 and 14 g h z. the hm c952 provides 36 db of gain, +35 dbm of saturated output power, and 28% p a e from a +6v power supply. the hm c952 exhibits excellent linearity and is optimized for high capacity p oint-to- p oint and p oint-to- m ulti- p oint r adio systems. the amplifer confguration and high gain make it an excellent candidate for last stage signal amplifcation before the antenna. all data is taken with the chip in a 50 o hm test fxture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length. s aturated o utput p ower: +35 dbm @ 28% p a e h igh o utput ip 3: +42 dbm h igh gain: 36 db dc s upply: +6v @ 1400 ma n o e xternal m atching r equired die s ize: 3.46 x 1.73 x 0.1 mm electrical specifcations, t a = +25 c, vdd1, vdd2, vdd3, vdd4, vdd5= +6v, idd = 1400 ma [1] typical applications the hm c952 is ideal for: ? point-to-point radios ? point-to-multi-point radios ? satcom ? military & space p arameter m in. typ. m ax. m in. typ. m ax. units f requency r ange 9 - 10 10 - 14 g hz gain 34 37 33 36 db gain variation o ver temperature 0.04 0.04 db/ c i nput r eturn l oss 12 16 db o utput r eturn l oss 8 12 db o utput p ower for 1 db compression ( p 1db) 31 34 31.5 34.5 dbm s aturated o utput p ower ( p sat) 35 35 dbm o utput third o rder i ntercept ( ip 3) [2] 41 42.5 dbm total s upply current ( i dd) 1400 1400 ma [1] adjust vgg between -2 to 0v to achieve i dd = 1400 ma typical. [2] m easurement taken at p out / tone = +20 dbm for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 2 HMC952 v00.0312 gaas phemt mmic 2 watt power amplifier with power detector, 9 - 14 ghz input return loss vs. temperature output return loss vs. temperature broadband gain & return loss vs. frequency gain vs. temperature p1db vs. temperature p1db vs. supply voltage [1] -30 -20 -10 0 10 20 30 40 8 9 10 11 12 13 14 15 16 s21 s11 s22 frequency (ghz) response (db) 15 20 25 30 35 40 45 9 10 11 12 13 14 +25c +85c -55c frequency (ghz) gain (db) -35 -30 -25 -20 -15 -10 -5 0 9 10 11 12 13 14 +25c +85c -55c frequency (ghz) return loss (db) -30 -25 -20 -15 -10 -5 0 9 10 11 12 13 14 +25c +85c -55c frequency (ghz) return loss (db) 26 28 30 32 34 36 38 9 10 11 12 13 14 +25c +85c -55c frequency (ghz) p1db (dbm) 26 28 30 32 34 36 38 9 10 11 12 13 14 5v 6v 7v frequency (ghz) p1db (dbm) [1] 7v plot taken at i dd= 1200 ma, 5v and 6v plots taken i dd= 1400ma. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 3 HMC952 v00.0312 gaas phemt mmic 2 watt power amplifier with power detector, 9 - 14 ghz output ip3 vs. supply current, pout/tone = +20 dbm output ip3 vs. temperature, pout/tone = +20 dbm psat vs. supply current (idd) p1db vs. supply current (idd) psat vs. temperature psat vs. supply voltage [1] 26 28 30 32 34 36 38 9 10 11 12 13 14 +25c +85c -55c frequency (ghz) psat (dbm) 26 28 30 32 34 36 38 9 10 11 12 13 14 5v 6v 7v frequency (ghz) psat (dbm) 26 28 30 32 34 36 38 9 10 11 12 13 14 1000 ma 1100 ma 1200 ma 1300 ma 1400 ma frequency (ghz) p1db (dbm) 26 28 30 32 34 36 38 9 10 11 12 13 14 1000 ma 1100 ma 1200ma 1300ma 1400ma frequency (ghz) psat(dbm) 30 32 34 36 38 40 42 44 46 9 10 11 12 13 14 +25c +85c -55c frequency (ghz) ip3 (dbm) 30 32 34 36 38 40 42 44 46 9 10 11 12 13 14 1000 ma 1100 ma 1200 ma 1300 ma 1400 ma frequency (ghz) ip3 (dbm) [1] 7v plot taken at i dd= 1200 ma, 5v and 6v plots taken i dd= 1400ma. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 4 HMC952 v00.0312 gaas phemt mmic 2 watt power amplifier with power detector, 9 - 14 ghz power compression @ 9.5 ghz output ip3 vs. supply voltage, pout/tone = +20 dbm [1] output im3 @ vdd = +6v noise figure vs temperature output im3 @ vdd = +5v 30 32 34 36 38 40 42 44 46 9 10 11 12 13 14 5v 6v 7v frequency (ghz) ip3 (dbm) 0 10 20 30 40 50 60 70 80 10 12 14 16 18 20 22 24 9.5 ghz 10.5 ghz 11.5 ghz 12.5 ghz 13.5 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 70 80 10 12 14 16 18 20 22 24 9.5 ghz 10.5 ghz 11.5 ghz 12.5 ghz 13.5 ghz pout/tone (dbm) im3 (dbc) 0 2 4 6 8 10 9 10 11 12 13 14 +25c +85c -55c frequency (ghz) noise figure (db) 0 5 10 15 20 25 30 35 40 0 400 800 1200 1600 2000 2400 2800 3200 -20 -15 -10 -5 0 5 pout gain pae idd pout (dbm), gain (db), pae (%) idd (ma) input power (dbm) [1] 7v plot taken at i dd= 1200 ma, 5v and 6v plots taken i dd= 1400ma. output im3 @ vdd = +7v [2] [2] 7v plot taken at i dd= 1200 ma. 0 10 20 30 40 50 60 70 80 10 12 14 16 18 20 22 24 9.5 ghz 10.5 ghz 11.5 ghz 12.5 ghz 13.5 ghz pout/tone (dbm) im3 (dbc) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 5 HMC952 v00.0312 gaas phemt mmic 2 watt power amplifier with power detector, 9 - 14 ghz gain & power vs. supply voltage @ 11.5 ghz gain & power vs. supply current @ 11.5 ghz reverse isolation vs. temperature power compression @ 13.5 ghz 0 5 10 15 20 25 30 35 40 0 400 800 1200 1600 2000 2400 2800 3200 -20 -15 -10 -5 0 5 pout gain pae idd pout (dbm), gain (db), pae (%) idd (ma) input power (dbm) -90 -80 -70 -60 -50 -40 -30 -20 -10 0 11 12 13 14 15 16 17 +25c +85c -55c frequency (ghz) isolation (db) detector voltage vs. frequency & temperature 20 24 28 32 36 40 1000 1050 1100 1150 1200 1250 1300 1350 1400 gain p1db psat idd (ma) gain (db), p1db (dbm), psat (dbm) 20 24 28 32 36 40 5 5.2 5.4 5.6 5.8 6 gain p1db psat vdd (v) gain (db), p1db (dbm), psat (dbm) 0.001 0.01 0.1 1 10 -10 -6 -2 2 6 10 14 18 22 26 30 34 10 ghz +25c 10 ghz +85c 10 ghz -40c 12 ghz +25c 12 ghz +85c 12 ghz -40c output power (dbm) vref-vdet (v) power compression @ 11.5 ghz 0 5 10 15 20 25 30 35 40 0 400 800 1200 1600 2000 2400 2800 3200 -20 -15 -10 -5 0 5 pout gain pae idd pout (dbm), gain (db), pae (%) idd (ma) input power (dbm) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 6 HMC952 v00.0312 gaas phemt mmic 2 watt power amplifier with power detector, 9 - 14 ghz power dissipation 0 2 4 6 8 10 12 -15 -12 -9 -6 -3 0 3 6 9 ghz 10 ghz 11 ghz 12 ghz 13 ghz 14 ghz power dissipation (w) input power (dbm) absolute maximum ratings drain bias voltage (vdd) +8v gate bias voltage (vgg) -3 ~ 0 vdc rf i nput p ower ( rfin ) +24 dbm channel temperature 150 c continuous p diss (t= 85 c) (derate 133 m w /c above 85 c) 8.6 w thermal r esistance (channel to die bottom) 7. 5 c / w s torage temperature -65 to +150 c o perating temperature -55 to +85 c es d sensitivity ( h b m ) class 0, p assed 150v typical supply current vs. vdd vdd (v) idd (ma) +5.0 1400 +6.0 1400 +7.0 1200 note: amplifer will operate over full voltage ranges shown above. vgg adjusted to achieve idd = 1400 ma at +6v. vgg adjusted to achieve idd = 1200 ma at +7v ele ct ros tat ic sensi t i v e de v ic e o b ser v e h a n d lin g pre caut ions for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 7 HMC952 v00.0312 gaas phemt mmic 2 watt power amplifier with power detector, 9 - 14 ghz outline drawing no t es : 1. a ll d imensions a re in in c hes [ mm ] 2. d ie t hi ck ness is .004 3. ty pi ca l b on d p ad is .004 s qua re 4. back si d e me ta lli zat ion : g ol d 5. b on d p ad me ta lli zat ion : g ol d 6. back si d e me ta l is g ro u n d. 7. c onne ct ion not re qu ire d for u nl ab ele d b on d p ad s . 8. ov er a ll d ie si z e .002 die packaging information [1] s tandard alternate g p -1 (gel p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 8 HMC952 v00.0312 gaas phemt mmic 2 watt power amplifier with power detector, 9 - 14 ghz pad descriptions p ad n umber f unction description i nterface s chematic 1 rfin this pad is dc coupled and matched to 50 o hms. 2 - 5, 9 vdd1, vdd2, vdd3, vdd4, vdd5 drain bias voltage for amplifer. e xternal bypas capacitors of 100p f , 10n f , and 4.7u f are required. 6 rfo ut this pad is dc coupled and matched to 50 o hms. 7 vdet dc voltage representing rf output power rectifed by diode which is biased through an external resistor. s ee applica - tion circuit. 8 vref dc bias of diode biased through external resistor, used for temperature compensation of vdet. s ee application circuit 10 - 12 vgg3, vgg2, vgg1 gate control for amplifer. e xternal bypass capacitors of 100p f and 100n f are required die bottom g nd die bottom must be connected to rf /dc ground. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 9 HMC952 v00.0312 gaas phemt mmic 2 watt power amplifier with power detector, 9 - 14 ghz assembly diagram application circuit for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - chip 10 HMC952 v00.0312 gaas phemt mmic 2 watt power amplifier with power detector, 9 - 14 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hm c general h andling, m ounting, bonding n ote). 50 o hm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o ne way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane ( f igure 2). m icrostrip substrates should be located as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based es d protec - tive containers, and then sealed in an es d protective bag for shipment. o nce the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o no t attempt to clean the chip using liquid cleaning systems. static sensitivity: f ollow es d precautions to protect against > 250v es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. w hen hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o no t expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom - mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. w irebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
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